document number: 89289 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount fast avalanche rectifiers ar1pd thru ar1pm vishay general semiconductor new product typical applications for use in fast switching re ctification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. features ? very low profile - typi cal height of 1.0 mm ? ideal for automated placement ? glass passivated chip junction ? fast switching for high efficiency ? low reverse current ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition mechanical data case: do-220aa (smp) molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade base p/nhm3 - halogen-free, rohs compliant, and automotive grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test primary characteristics i f(av) 1.0 a v rrm 200 v to 1000 v i fsm 30 a, 25 a t rr 140 ns, 120 ns i r 1 a e as 20 mj t j max. 175 c do-220aa ( s mp) e s mp ? s eries maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ar1pd ar1pg ar1pj ar1pk ar1pm unit device marking code ard arg arj ark arm maximum repetitive peak reverse voltage v rrm 200 400 600 800 1000 v average forward current i f(av) 1.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 30 25 a non-repetitive avalanche energy at i as = 1.0 a, t a = 25 c e as 20 mj operating junction and storage temperature range t j , t stg - 55 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89289 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ar1pd thru ar1pm vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) free air, mounted on recommended copper pad area. thermal resistance r ? ja - junction to ambient, r ? jm - junction to mo unt at the terminal cathode band note (1) automotive grade ratings and characteristics curves (t a = 25 ? c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol ar1pd ar1pg ar1pj ar1pk ar1pm unit maximum instantaneous forward voltage i f = 1.0 a t a = 25 c v f (1) 1.25 1.6 v t a = 125 c 1.15 1.4 maximum reverse current rated v r t a = 25 c i r (2) 1.0 a t a = 125 c 100 maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 140 120 ns typical junction capacitance 4.0 v, 1 mhz c j 12.5 8.5 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ar1pd ar1pg ar1pj ar1pk ar1pm unit typical thermal resistance r ? ja (1) 132 c/w r ? jm (1) 15 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode ar1pj-m3/84a 0.024 84a 3000 7" diam eter plastic tape and reel ar1pj-m3/85a 0.024 85a 10 000 13" diam eter plastic tape and reel ar1pjhm3/84a (1) 0.024 84a 3000 7" diameter plastic tape and reel ar1pjhm3/85a (1) 0.024 85a 10 000 13" diameter plastic tape and reel 0 1.2 100 110 120 130 140 150 160 180 average forward rectied current (a) t m - mount temperature (c) 0.8 1.0 0.2 0.4 0.6 t m mea s ured at mount of terminal 170 re s i s tive or inductive load ar1pd thru ar1pj ar1pk thru ar1pm 1.2 1.0 0.8 0.6 0.4 0.2 0 1.2 1.0 0.8 0.6 0.4 0.2 0 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 average forward current (a) average power lo ss (w) d = t p /t t p t ar1pd thru ar1pj
document number: 89289 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ar1pd thru ar1pm vishay general semiconductor new product fig. 3 - forward power loss characteristics fig. 4 - typical instantaneous forward characteristics fig. 5 - typical instantaneous forward characteristics fig. 6 - typical reverse characteristics fig. 7 - typical reverse characteristics fig. 8 - typical j unction capacitance 1.4 1.0 0.8 0.6 0.4 0.2 0 1.2 1.0 0.8 0.6 0.4 0.2 0 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 average forward current (a) average power lo ss (w) d = t p /t t p t ar1pk thru ar1pm 1.2 0.3 0.5 0.7 in s tantaneou s forward voltage (v) 0.1 1 10 in s tantaneou s forward current (a) 0.01 1.9 t a = 125 c t a = 25 c t a = 75 c t a = 175 c 1.7 1.5 1.3 1.1 0.9 ar1pd thru ar1pj 0.3 0.5 0.7 in s tantaneou s forward voltage (v) 0.1 1 10 in s tantaneou s forward current (a) 0.01 1.9 t a = 125 c t a = 25 c t a = 75 c t a = 175 c 1.7 1.5 1.3 1.1 0.9 ar1pk thru ar1pm percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) 20 40 60 80 100 0.1 1 10 1000 10 30 50 70 90 0.01 ar1pd thru ar1pj t a = 125 c t a = 25 c t a = 75 c t a = 175 c 100 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) 20 40 60 80 100 0.1 1 10 1000 10 30 50 70 90 0.01 ar1pk thru ar1pm t a = 125 c t a = 25 c t a = 75 c t a = 175 c 100 rever s e voltage (v) junction capacitance (pf) 0.1 10 1 100 1 10 100 ar1pd thru ar1pj ar1pk thru ar1pm t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89289 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ar1pd thru ar1pm vishay general semiconductor new product fig. 9 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.01 10 1 100 1 10 100 0.1 1000 t - pul s e duration ( s ) tran s ient thermal impedance (c/w) junction to ambient do-220aa ( s mp) cathode band 006 (21) 004 (1) 0142 (61) 0126 (19) 01 (400) 0146 (0) 001 (0) 0004 (010) 0012 (00) 0000 (000) 001 (04) 0006 (01) 004 (11) 00 (0) 006 (091) 0024 (061) 002 (00) 0016 (040) 010 (260) 00 (220) 00 (1) 0041 (10) 0012 (00) ref 0100 (24) 010 (26) 002 (06) 000 (062) 000 (12)
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